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| 2SK2251-01 FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = 30V Guarantee Avalanche Proof N-channel MOS-FET 250V 2 2A 20W > Outline Drawing > Applications Switching Regulators UPS DC-DC converters General Purpose Power Amplifier > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25C), unless otherwise specified Item Drain-Source-Voltage Drain-Gate-Voltage (RGS=20K) Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS V DGR ID I D(puls) V GS PD T ch T stg Rating 250 250 2 8 30 20 150 -55 ~ +150 Unit V V A A V W C C > Equivalent Circuit - Electrical Characteristics (TC=25C), unless otherwise specified Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage Drain Current Gate Source Leakage Current Drain Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On-Time ton (ton=td(on)+tr) Turn-Off-Time toff (ton=td(off)+tf) Avalanche Capability Continous Reverse Drain Current Pulsed Reverse Drain Current Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge Symbol V (BR)DSS V GS(th) I DSS I R g C C C t t t t I I I V t Q GSS DS(on) fs iss oss rss d(on) r d(off) f AV DR DRM SD rr rr Test conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=250V Tch=25C VGS=0V Tch=125C VGS=30V VDS=0V ID=1A VGS=10V ID=1A VDS=25V VDS=25V VGS=0V f=1MHz VCC=150V ID=2A VGS=10V RGS=10 Tch=25C L = 100H Min. 250 2,5 Typ. 3,0 10 0,2 10 1,2 1,5 250 50 15 25 20 50 15 Max. 3,5 500 1,0 100 2,0 380 80 25 40 30 80 25 2 4 1,4 0,7 2 IF=2xIDR VGS=0V Tch=25C IF=IDR VGS=0V -dIF/dt=100A/s Tch=25C 0,9 80 0,2 Unit V V A mA nA S pF pF pF ns ns ns ns A A A V ns C - Thermal Characteristics Item Thermal Resistance Symbol R th(ch-a) R th(ch-c) Test conditions channel to air channel to case Min. Typ. Max. 75 6,25 Unit C/W C/W Collmer Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX - 75370 - 972-233-1589 - FAX 972-233-0481 - http://www.collmer.com N-channel MOS-FET 250V 2 2SK2251-01 FAP-IIA Series Drain-Source-On-State Resistance vs. Tch Typical Transfer Characteristics 2A 20W > Characteristics Typical Output Characteristics ID [A] 1 RDS(ON) [] 2 ID [A] 3 VDS [V] Tch [C] VGS [V] Typical Drain-Source-On-State-Resistance vs. ID Typical Forward Transconductance vs. ID Gate Threshold Voltage vs. Tch RDS(ON) [] 4 gfs [S] 5 VGS(th) [V] 6 ID [A] ID [A] Tch [C] Typical Capacitance vs. VDS Typical Input Charge Forward Characteristics of Reverse Diode C [nF] 7 VDS [V] 8 VGS [V] IF [A] 9 VDS [V] Qg [nC] VSD [V] Allowable Power Dissipation vs. TC Safe operation area Zth(ch-c) [K/W] Transient Thermal impedance PD [W] 10 ID [A] 12 11 Tc [C] VDS [V] t [s] This specification is subject to change without notice! |
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